Chen Tze-chiang | |
|---|---|
| 陳自強 | |
| Born | 1951 (age 73–74) |
| Education | National Cheng Kung University (BS, MS) Yale University (MS, PhD) |
| Scientific career | |
| Fields | Applied physics |
| Institutions | Thomas J. Watson Research Center |
| Thesis | Bistable Switching in Metal/Thin Oxide/Silicon Devices (1985) |
| Doctoral advisor | Richard C. Barker |
Chen Tze-chiang (Chinese: 陳自強; pinyin: Chén Zìqiáng; born 1951) is a Taiwanese physicist and electrical engineer. He joined the IBM Thomas J. Watson Research Center in 1984. He is currently an IBM Fellow and the Vice President of Science and Technology at Thomas J. Watson Research Center, IBM Research Division in Yorktown Heights, New York.
Early life and education
[edit]Chen was born in Taiwan in 1951 to parents who were both teachers.[1] He graduated from National Cheng Kung University with a Bachelor of Science (B.S.) in 1974 and a Master of Science (M.S.) in 1976, both in physics. He then completed doctoral studies in the United States at Yale University, where he earned a second M.S. in 1979 and his Ph.D. in electrical engineering and applied science in 1985.
Academic career
[edit]Chen has published more than 60 papers in technical journals and conferences. His contributions to advanced bipolar technology had a major impact on IBM S/390 mainframe systems. More recently, his contributions to CMOS miniaturization and DRAM devices have had a profound impact on IBM's leadership in CMOS process technology and DRAM manufacturing. Chen was elected as a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 1999 for contributions to silicon bipolar and DRAM technology development.[2] Chen has been recognized with several IBM Technical Innovation Awards and was named IBM Distinguished Engineer and IBM Fellow in 1996 and 1999, respectively.
During the period of Feb. 1999 - Feb. 2003, Chen was the Director of Advanced Logic/Memory Technology Development at the Semiconductor Research and Development Center, IBM Microelectronics Division in East Fishkill, New York. During the period of 1992–1999, he was the Senior Manager responsible for the 64Mb/256Mb/1Gb DRAM Technology Development in IBM/Siemens/Toshiba DRAM Development Alliance. Before assuming his role as the Project Manager in DRAM Development, he held a variety of managerial assignments in his career at IBM, including Functional Manager of High-Performance BiCMOS Technology, Manufacturing Engineering Manager in the Bipolar VLSI Line, and Manager of Optical Lithography Development at Watson Research Center.
Awards and honors
[edit]In 2011, he received the IEEE Ernst Weber Managerial Leadership Award. In 2022, he was elected to the Academia Sinica.[3]
In 2025, Chen was elected to the National Academy of Engineering.[4]
References
[edit]- ^ Alnajjar, Nadean. "Alumni Profile: Tze-Chiang Chen (PhD '85) – Following the life of one of the biggest names in electrical engineering – Yale Scientific Magazine". www.yalescientific.org. Retrieved 2024-11-28.
- ^ "Fellow Class of 1999". IEEE. Archived from the original on 2011-06-29. Retrieved 2011-02-04.
- ^ Chung, Jake. "Top research institute selects 19 new members". taipeitimes.com. Taipei Times. Retrieved 7 July 2022.
- ^ "National Academy of Engineering Elects 128 Members and 22 International Members". NAE Website. Retrieved 2025-09-23.
External links
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